BSC0502NSI
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BSC0502NSI
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 26
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 4
ns
Cossⓘ - Выходная емкость: 420
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0023
Ohm
Тип корпуса:
SUPERSO8
- подбор MOSFET транзистора по параметрам
BSC0502NSI
Datasheet (PDF)
..1. Size:1580K infineon
bsc0502nsi.pdf 

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0502NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0502NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
8.1. Size:485K infineon
bsc050n03ms.pdf 

BSC050N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 6.3 100% avalanche tested ID 80 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS
8.2. Size:1364K infineon
bsc050n10ns5.pdf 

BSC050N10NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14 175C ratedProduct Validation:Qualified for
8.3. Size:548K infineon
bsc050n03msg5.pdf 

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8.4. Size:1634K infineon
bsc050ne2ls .pdf 

n-Channel Power MOSFETOptiMOSBSC050NE2LS Data Sheet2.1, 2011-09-20Final Industrial & MultimarketOptiMOS Power-MOSFETBSC050NE2LS1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMO
8.5. Size:482K infineon
bsc050n03ls.pdf 

BSC050N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 80 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
8.6. Size:520K infineon
bsc050n04lsg.pdf 

BSC050N04LS GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 40 V Fast switching MOSFET for SMPSRDS(on),max 5.0 mW Optimized technology for DC/DC convertersID 85 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S
8.7. Size:1561K infineon
bsc0503nsi.pdf 

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0503NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0503NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
8.8. Size:830K infineon
bsc050ne2ls.pdf 

BSC050NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 5.0 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 58 A 100% avalanche testedQGD 1.3 nC Superior thermal resistanceQG(0V..10V) 10.4 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8
8.9. Size:691K infineon
bsc050n03ls .pdf 

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8.10. Size:522K infineon
bsc050n03lsg.pdf 

BSC050N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 80 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
8.11. Size:1570K infineon
bsc0504nsi.pdf 

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0504NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0504NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
8.12. Size:1555K infineon
bsc0501nsi.pdf 

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0501NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0501NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
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History: FDS9431AF085
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| SK860316
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| 2SK2882