BSC0502NSI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSC0502NSI
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 420 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
Тип корпуса: SUPERSO8
Аналог (замена) для BSC0502NSI
BSC0502NSI Datasheet (PDF)
bsc0502nsi.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0502NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0502NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
bsc050n03ms.pdf
BSC050N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 6.3 100% avalanche tested ID 80 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS
bsc050n10ns5.pdf
BSC050N10NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14 175C ratedProduct Validation:Qualified for
bsc050n03msg5.pdf
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bsc050ne2ls .pdf
n-Channel Power MOSFETOptiMOSBSC050NE2LS Data Sheet2.1, 2011-09-20Final Industrial & MultimarketOptiMOS Power-MOSFETBSC050NE2LS1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMO
bsc050n03ls.pdf
BSC050N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 80 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
bsc050n04lsg.pdf
BSC050N04LS GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 40 V Fast switching MOSFET for SMPSRDS(on),max 5.0 mW Optimized technology for DC/DC convertersID 85 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S
bsc0503nsi.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0503NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0503NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
bsc050ne2ls.pdf
BSC050NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 5.0 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 58 A 100% avalanche testedQGD 1.3 nC Superior thermal resistanceQG(0V..10V) 10.4 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8
bsc050n03ls .pdf
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bsc050n03lsg.pdf
BSC050N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 80 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
bsc0504nsi.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0504NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0504NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
bsc0501nsi.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0501NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0501NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918