Справочник MOSFET. BSC050N10NS5

 

BSC050N10NS5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSC050N10NS5
   Маркировка: 050N10N5
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 49 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 490 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: SUPERSO8

 Аналог (замена) для BSC050N10NS5

 

 

BSC050N10NS5 Datasheet (PDF)

 ..1. Size:1364K  infineon
bsc050n10ns5.pdf

BSC050N10NS5 BSC050N10NS5

BSC050N10NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14 175C ratedProduct Validation:Qualified for

 7.1. Size:485K  infineon
bsc050n03ms.pdf

BSC050N10NS5 BSC050N10NS5

BSC050N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 6.3 100% avalanche tested ID 80 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

 7.2. Size:548K  infineon
bsc050n03msg5.pdf

BSC050N10NS5 BSC050N10NS5

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 7.3. Size:1634K  infineon
bsc050ne2ls .pdf

BSC050N10NS5 BSC050N10NS5

n-Channel Power MOSFETOptiMOSBSC050NE2LS Data Sheet2.1, 2011-09-20Final Industrial & MultimarketOptiMOS Power-MOSFETBSC050NE2LS1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMO

 7.4. Size:482K  infineon
bsc050n03ls.pdf

BSC050N10NS5 BSC050N10NS5

BSC050N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 80 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 7.5. Size:520K  infineon
bsc050n04lsg.pdf

BSC050N10NS5 BSC050N10NS5

BSC050N04LS GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 40 V Fast switching MOSFET for SMPSRDS(on),max 5.0 mW Optimized technology for DC/DC convertersID 85 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S

 7.6. Size:830K  infineon
bsc050ne2ls.pdf

BSC050N10NS5 BSC050N10NS5

BSC050NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 5.0 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 58 A 100% avalanche testedQGD 1.3 nC Superior thermal resistanceQG(0V..10V) 10.4 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8

 7.7. Size:691K  infineon
bsc050n03ls .pdf

BSC050N10NS5 BSC050N10NS5

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 7.8. Size:522K  infineon
bsc050n03lsg.pdf

BSC050N10NS5 BSC050N10NS5

BSC050N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 80 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

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