BSC093N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr)4 150 C operating temperature132 2 Pb-free lead plating; RoHS compliant3 14 Qualified according to JEDEC

BSC093N04LS GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 40 V Fast switching MOSFET for SMPSRDS(on),max 9.3 mW Optimized technology for DC/DC convertersID 49 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S

BSC0902NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 16 nC Superior thermal resistanceQG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8

BSC096N10LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Ideal for high-frequency switching 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14 Optimized for chargersProduct validationFully quali

BSC090N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 48 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

BSC0923NDI Dual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 5 2.8 mW Logic level (4.5V rated)VGS=4.5 V 7 3.7 100% avalanche testedID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; R

BSC0925NDOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Dual N-channel OptiMOS MOSFETRDS(on),max 5 mW Optimized for clean switchingID 40 A 100% avalanche testedQOSS 8.6 nC Superior thermal resistanceQG(0V..10V) 13 nC Optimized for high performance Buck converter Qualified according to JEDEC1) for target applicationsVPhase

BSC094N06LS5MOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according t

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSC098N10NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSC098N10NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal

n-Channel Power MOSFETOptiMOSBSC0901NS Data Sheet2.1, 2011-09-23Final Industrial & MultimarketOptiMOS Power-MOSFETBSC0901NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

BSC0921NDIDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 5 1.6 mW Logic level (4.5V rated)VGS=4.5 V 7 2.1 N-channelID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant

BSC0993NDMOSFETPowerstage 5x6OptiMOSTM Power-MOSFET, 30 VFeatures Dual N-channel OptiMOS MOSFET Optimized for clean switching 100% avalanche tested Superior thermal resistance Optimized for wireless charger Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Table

BSC0904NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 3.7 mW Integrated monolithic Schottky-like diodeID 78 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 12 nC 100% avalanche testedQG(0V..10V) 17 nC Superior thermal resistance N-channel Qualified accordin

n-Channel Power MOSFETOptiMOSBSC0906NS Data Sheet2.0, 2011-06-10Final Industrial & MultimarketOptiMOS Power-MOSFETBSC0906NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

BSC0996NSMOSFETSuperSO8OptiMOS Power-MOSFET, 34 V5867Features 7685Features Optimized for 5V driver application (Wireless Charging) Low FOM for High Frequency SMPSSW 100% Avalanche tested4 Improved switching behaviour132 2 N-channel3 14 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

& " & E $;B1= !#& '$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m x 4 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"

% ! % D %0S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD F:7D

BSC0902NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.8 mW Integrated monolithic Schottky-like diodeID 100 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 17 nC 100% avalanche testedQG(0V..10V) 24 nC Superior thermal resistance N-channel Qualified accordi

n-Channel Power MOSFETOptiMOSBSC0908NS Data Sheet3.2, 2011-09-26Final Industrial & MultimarketOptiMOS Power-MOSFETBSC0908NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

BSC0911NDDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 25 25 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 3.2 1.2 mW Logic level (4.5V rated)VGS=4.5 V 4.8 1.7 N-channelID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS complia

BSC0901NSIOptiMOSTM Power-MOSFETProduct SummaryFeaturesVDS 30 V Optimized SyncFET for high performance buck converterRDS(on),max 2mW Integrated monolithic Schottky-like diodeID 100 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 28 nC 100% avalanche testedQG(0V..10V) 41 nC Superior thermal resistance N-channel Qualified according to JEDE

BSC0924NDIDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Integrated monolithic Schottky-like diodeRDS(on),max VGS=10 V 5 3.7 mW Optimized for high performance Buck converter VGS=4.5 V 7 5.2 Logic level (4.5V rated)ID 40 40 A 100% avalanche tested Qualified according to JEDEC1) for tar

BSC0909NSOptiMOS Power-MOSFETProduct Summary Features VDS 34 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 9.2 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 11.8 100% Avalanche testedID 44 A Improved switching behaviourPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate c

% ! % D #:A0

BSC0910NDIDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 25 25 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 4.6 1.2 mW Logic level (4.5V rated)VGS=4.5 V 5.9 1.6 100% avalanche testedID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating;

n-Channel Power MOSFETOptiMOSBSC0909NS Data Sheet3.2, 2011-09-26Final Industrial & MultimarketOptiMOS Power-MOSFETBSC0909NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

BSC097N06NSTMOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 175 C rated 100% avalanche tested Superior thermal resistance4 N-channel132 2 Qualified according to JEDEC1) for target applications3 14 Pb-free lead plating; RoHS compliant Halogen-free accor

TypeBSC097N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS V 60 100% avalanche tested9.7 RDS(on),max mW Superior thermal resistanceID A 46 N-channelQOSS nC 14 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 12 Pb-free lead plating; RoHS complian