Справочник MOSFET. BSC0996NS

 

BSC0996NS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSC0996NS
   Маркировка: 0996NS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 34 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 15 nC
   trⓘ - Время нарастания: 4.4 ns
   Cossⓘ - Выходная емкость: 390 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: SUPERSO8

 Аналог (замена) для BSC0996NS

 

 

BSC0996NS Datasheet (PDF)

 ..1. Size:1469K  infineon
bsc0996ns.pdf

BSC0996NS
BSC0996NS

BSC0996NSMOSFETSuperSO8OptiMOS Power-MOSFET, 34 V5867Features 7685Features Optimized for 5V driver application (Wireless Charging) Low FOM for High Frequency SMPSSW 100% Avalanche tested4 Improved switching behaviour132 2 N-channel3 14 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

 8.1. Size:1029K  infineon
bsc0993nd.pdf

BSC0996NS
BSC0996NS

BSC0993NDMOSFETPowerstage 5x6OptiMOSTM Power-MOSFET, 30 VFeatures Dual N-channel OptiMOS MOSFET Optimized for clean switching 100% avalanche tested Superior thermal resistance Optimized for wireless charger Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Table

 9.1. Size:816K  infineon
bsc0902ns.pdf

BSC0996NS
BSC0996NS

BSC0902NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 16 nC Superior thermal resistanceQG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8

 9.2. Size:1085K  infineon
bsc096n10ls5.pdf

BSC0996NS
BSC0996NS

BSC096N10LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Ideal for high-frequency switching 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14 Optimized for chargersProduct validationFully quali

 9.3. Size:521K  infineon
bsc090n03lsg.pdf

BSC0996NS
BSC0996NS

BSC090N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 48 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 9.4. Size:690K  infineon
bsc0923ndi.pdf

BSC0996NS
BSC0996NS

BSC0923NDI Dual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 5 2.8 mW Logic level (4.5V rated)VGS=4.5 V 7 3.7 100% avalanche testedID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; R

 9.5. Size:586K  infineon
bsc0925nd.pdf

BSC0996NS
BSC0996NS

BSC0925NDOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Dual N-channel OptiMOS MOSFETRDS(on),max 5 mW Optimized for clean switchingID 40 A 100% avalanche testedQOSS 8.6 nC Superior thermal resistanceQG(0V..10V) 13 nC Optimized for high performance Buck converter Qualified according to JEDEC1) for target applicationsVPhase

 9.6. Size:520K  infineon
bsc093n04lsg.pdf

BSC0996NS
BSC0996NS

BSC093N04LS GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 40 V Fast switching MOSFET for SMPSRDS(on),max 9.3 mW Optimized technology for DC/DC convertersID 49 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S

 9.7. Size:1111K  infineon
bsc094n06ls5.pdf

BSC0996NS
BSC0996NS

BSC094N06LS5MOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according t

 9.8. Size:1185K  infineon
bsc098n10ns5.pdf

BSC0996NS
BSC0996NS

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSC098N10NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSC098N10NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal

 9.9. Size:1609K  infineon
bsc0901ns bsc0901ns .pdf

BSC0996NS
BSC0996NS

n-Channel Power MOSFETOptiMOSBSC0901NS Data Sheet2.1, 2011-09-23Final Industrial & MultimarketOptiMOS Power-MOSFETBSC0901NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

 9.10. Size:693K  infineon
bsc0921ndi.pdf

BSC0996NS
BSC0996NS

BSC0921NDIDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 5 1.6 mW Logic level (4.5V rated)VGS=4.5 V 7 2.1 N-channelID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant

 9.11. Size:791K  infineon
bsc0904nsi.pdf

BSC0996NS
BSC0996NS

BSC0904NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 3.7 mW Integrated monolithic Schottky-like diodeID 78 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 12 nC 100% avalanche testedQG(0V..10V) 17 nC Superior thermal resistance N-channel Qualified accordin

 9.12. Size:1526K  infineon
bsc0906ns.pdf

BSC0996NS
BSC0996NS

n-Channel Power MOSFETOptiMOSBSC0906NS Data Sheet2.0, 2011-06-10Final Industrial & MultimarketOptiMOS Power-MOSFETBSC0906NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

 9.13. Size:686K  infineon
bsc090n03ls.pdf

BSC0996NS
BSC0996NS

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 9.14. Size:680K  infineon
bsc090n03msg.pdf

BSC0996NS
BSC0996NS

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 9.15. Size:658K  infineon
bsc0902nsi.pdf

BSC0996NS
BSC0996NS

BSC0902NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.8 mW Integrated monolithic Schottky-like diodeID 100 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 17 nC 100% avalanche testedQG(0V..10V) 24 nC Superior thermal resistance N-channel Qualified accordi

 9.16. Size:1630K  infineon
bsc0908ns rev3.2.pdf

BSC0996NS
BSC0996NS

n-Channel Power MOSFETOptiMOSBSC0908NS Data Sheet3.2, 2011-09-26Final Industrial & MultimarketOptiMOS Power-MOSFETBSC0908NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

 9.17. Size:679K  infineon
bsc0911nd.pdf

BSC0996NS
BSC0996NS

BSC0911NDDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 25 25 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 3.2 1.2 mW Logic level (4.5V rated)VGS=4.5 V 4.8 1.7 N-channelID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS complia

 9.18. Size:580K  infineon
bsc0901nsi.pdf

BSC0996NS
BSC0996NS

BSC0901NSIOptiMOSTM Power-MOSFETProduct SummaryFeaturesVDS 30 V Optimized SyncFET for high performance buck converterRDS(on),max 2mW Integrated monolithic Schottky-like diodeID 100 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 28 nC 100% avalanche testedQG(0V..10V) 41 nC Superior thermal resistance N-channel Qualified according to JEDE

 9.19. Size:685K  infineon
bsc0924ndi.pdf

BSC0996NS
BSC0996NS

BSC0924NDIDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Integrated monolithic Schottky-like diodeRDS(on),max VGS=10 V 5 3.7 mW Optimized for high performance Buck converter VGS=4.5 V 7 5.2 Logic level (4.5V rated)ID 40 40 A 100% avalanche tested Qualified according to JEDEC1) for tar

 9.20. Size:608K  infineon
bsc0909ns.pdf

BSC0996NS
BSC0996NS

BSC0909NSOptiMOS Power-MOSFETProduct Summary Features VDS 34 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 9.2 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 11.8 100% Avalanche testedID 44 A Improved switching behaviourPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate c

 9.21. Size:634K  infineon
bsc094n03s g.pdf

BSC0996NS
BSC0996NS

% ! % D #:A0

 9.22. Size:1052K  infineon
bsc093n15ns5.pdf

BSC0996NS
BSC0996NS

BSC093N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr)4 150 C operating temperature132 2 Pb-free lead plating; RoHS compliant3 14 Qualified according to JEDEC

 9.23. Size:684K  infineon
bsc0910ndi.pdf

BSC0996NS
BSC0996NS

BSC0910NDIDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 25 25 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 4.6 1.2 mW Logic level (4.5V rated)VGS=4.5 V 5.9 1.6 100% avalanche testedID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating;

 9.24. Size:1638K  infineon
bsc0909ns rev3.2.pdf

BSC0996NS
BSC0996NS

n-Channel Power MOSFETOptiMOSBSC0909NS Data Sheet3.2, 2011-09-26Final Industrial & MultimarketOptiMOS Power-MOSFETBSC0909NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

 9.25. Size:1301K  infineon
bsc097n06nst.pdf

BSC0996NS
BSC0996NS

BSC097N06NSTMOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 175 C rated 100% avalanche tested Superior thermal resistance4 N-channel132 2 Qualified according to JEDEC1) for target applications3 14 Pb-free lead plating; RoHS compliant Halogen-free accor

 9.26. Size:483K  infineon
bsc097n06ns.pdf

BSC0996NS
BSC0996NS

TypeBSC097N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS V 60 100% avalanche tested9.7 RDS(on),max mW Superior thermal resistanceID A 46 N-channelQOSS nC 14 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 12 Pb-free lead plating; RoHS complian

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