BSZ0500NSI - параметры транзистора MOSFET, его аналоги, datasheet

BSZ0500NSI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: BSZ0500NSI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 850 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0015 Ohm
   Тип корпуса: TSDSON-8

Аналог (замена) для BSZ0500NSI

BSZ0500NSI Datasheet (PDF)

..1. Size:1645K infineon
bsz0500nsi.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSZ0500NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSZ0500NSITSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Ver

8.1. Size:318K infineon
bsz050n03ms.pdf

BSZ050N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeatures V 30 VDS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.7GS 100% avalanche tested I 40 ADPG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

8.2. Size:1594K infineon
bsz0501nsi.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSZ0501NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSZ0501NSITSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Ver

8.3. Size:1578K infineon
bsz0506ns.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSZ0506NSData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSZ0506NSTSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters (Server,VGA) Very low FOM for high frequency SMPSQ

8.4. Size:327K infineon
bsz050n03lsg.pdf

BSZ050N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 5mDS(on),max Optimized technology for DC/DC converters I 40 AD Qualified according to JEDEC1) for target applicationsPG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

8.5. Size:320K infineon
bsz050n03msg.pdf