Справочник MOSFET. BSZ0703LS

 

BSZ0703LS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BSZ0703LS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 2.9 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TSDSON-8
     - подбор MOSFET транзистора по параметрам

 

BSZ0703LS Datasheet (PDF)

 ..1. Size:1446K  infineon
bsz0703ls.pdfpdf_icon

BSZ0703LS

BSZ0703LSMOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for chargers 100% avalanche tested Superior thermal resistance N-channel, Logic level Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified for Standard Grade applications Ideal for high-frequency switchi

 8.1. Size:1428K  infineon
bsz070n08ls5.pdfpdf_icon

BSZ0703LS

BSZ070N08LS5MOSFETTSDSON-8 FLOptiMOS5 Power-Transistor, 80 V(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian

 9.1. Size:243K  infineon
bsz076n06ns3.pdfpdf_icon

BSZ0703LS

TypeBSZ076N06NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 7.6mDS(on),max Optimized technology for DC/DC convertersI 20 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; R

 9.2. Size:1358K  infineon
bsz075n08ns5.pdfpdf_icon

BSZ0703LS

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VBSZ075N08NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VBSZ075N08NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PSMN7R0-100XS | IXTT360N055T2 | WMK18N50C4 | KHB9D0N50P1 | PJU2NA60H | HGN110N08AL | KRF7401

 

 
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