BSZ0994NS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSZ0994NS
Маркировка: 0994NS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 10 nC
trⓘ - Время нарастания: 3.4 ns
Cossⓘ - Выходная емкость: 270 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: TSDSON-8
BSZ0994NS Datasheet (PDF)
bsz0994ns.pdf
BSZ0994NSMOSFETTSDSON-8 FLOptiMOSTM Power-MOSFET, 30 V(enlarged source interconnection)Features Optimized for high performance Wireless charger Very low FOM for High Frequency SMPSQOSS Low FOM for High Frequency SMPSSW Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior the
bsz099n06ls5.pdf
BSZ099N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor,60V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Table
bsz097n10ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSZ097N10NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSZ097N10NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching Optimized technology for DC/DC converters E
bsz0909ns rev3.2.pdf
n-Channel Power MOSFETOptiMOSBSZ0909NS Data Sheet3.2, 2011-09-22Final Industrial & MultimarketOptiMOS Power-MOSFETBSZ0909NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS
bsz0901ns.pdf
For BSZ0901NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 2.0 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 2.6 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on)PG-TSDSON-8 (fused leads) Very low on-resistance R @
bsz0901nsi.pdf
BSZ0901NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.1 mW Integrated monolithic Schottky-like diodeID 40 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 28 nC 100% avalanche testedQG(0V..10V) 41 nC Superior thermal resistancePG-TSDSON-8 (fused leads) N-cha
bsz0908nd.pdf
BSZ0908NDPowerStage 3x3Product Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Enhancement modeRDS(on),max VGS=10 V 18 9 mW Logic level (4.5V rated)VGS=4.5 V 25 13 Avalanche ratedID 19 30 A 100% Lead-free; RoHS compliantPG-WISON-8 Halogen-free according to IEC61249-2-21Type Package Marking Lead Free BSZ0908ND PG-WISON-8 090
bsz0904nsi.pdf
BSZ0904NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 4.0 mW Integrated monolithic Schottky-like diodeID 40 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 12 nC 100% avalanche testedQG(0V..10V) 17 nC Superior thermal resistancePG-TSDSON-8 (fused leads) N-cha
bsz0909nd.pdf
BSZ0909NDMOSFETPowerStage 3x3PowerStage 3x3Features Dual N-channel OptiMOS MOSFET Enhancement mode Logic level (4.5V rated) Avalanche rated 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21Table 1 Key Performance ParametersParameter Value UnitV 30 VDSR 18 mDS(on),maxI 20 ADQ 2.3 nCOSSQ (0V..4.5V) 1.8 nCGType /
bsz0902ns.pdf
BSZ0902NSFor OptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 2.6 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 3.5 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on)PG-TSDSON-8 (fused leads) Very low on-resistance R
bsz0902nsi.pdf
BSZ0902NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.8 mW Integrated monolithic Schottky-like diodeID 40 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 17 nC 100% avalanche testedQG(0V..10V) 24 nC Superior thermal resistancePG-TSDSON-8 (fused leads) N-cha
bsz0907nd.pdf
BSZ0907NDDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Enhancement modeRDS(on),max VGS=10 V 9.5 7.2 mW Logic level (4.5V rated)VGS=4.5 V 13 10 Avalanche ratedID 25 30 A 100% Lead-free; RoHS compliantPG-WISON-8 Halogen-free according to IEC61249-2-21Type Package Marking Lead Free BSZ
bsz097n04lsg.pdf
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Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918