Справочник MOSFET. IMW120R090M1H

 

IMW120R090M1H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IMW120R090M1H
   Маркировка: 12M1H090
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 115 W
   Предельно допустимое напряжение сток-исток |Uds|: 1200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 23 V
   Пороговое напряжение включения |Ugs(th)|: 5.7 V
   Максимально допустимый постоянный ток стока |Id|: 26 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 21 nC
   Время нарастания (tr): 4 ns
   Выходная емкость (Cd): 39 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.125 Ohm
   Тип корпуса: TO247

 Аналог (замена) для IMW120R090M1H

 

 

IMW120R090M1H Datasheet (PDF)

 ..1. Size:1125K  infineon
 imw120r090m1h.pdf

IMW120R090M1H IMW120R090M1H

IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 6.1. Size:1124K  infineon
 imw120r060m1h.pdf

IMW120R090M1H IMW120R090M1H

IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 6.2. Size:1365K  infineon
 aimw120r045m1.pdf

IMW120R090M1H IMW120R090M1H

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

 6.3. Size:1126K  infineon
 imw120r030m1h.pdf

IMW120R090M1H IMW120R090M1H

IMW120R030M1H IMW120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 6.4. Size:1393K  infineon
 imw120r045m1.pdf

IMW120R090M1H IMW120R090M1H

IMW120R045M1 IMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET DrainFeatures pin 2 Very low switching losses Gate Threshold-free on state characteristic pin 1 Wide gate-source voltage range Sourcepin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage Fully controllable dV/dt Commutation robus

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