Справочник MOSFET. IMZ120R060M1H

 

IMZ120R060M1H Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IMZ120R060M1H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 23 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 58 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.083 Ohm
   Тип корпуса: TO247-4
 

 Аналог (замена) для IMZ120R060M1H

   - подбор ⓘ MOSFET транзистора по параметрам

 

IMZ120R060M1H Datasheet (PDF)

 ..1. Size:1223K  infineon
 imz120r060m1h.pdf pdf_icon

IMZ120R060M1H

IMZ120R060M1H IMZ120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 6.1. Size:1224K  infineon
 imz120r090m1h.pdf pdf_icon

IMZ120R060M1H

IMZ120R090M1H IMZ120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 6.2. Size:1225K  infineon
 imz120r030m1h.pdf pdf_icon

IMZ120R060M1H

IMZ120R030M1H IMZ120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 7.1. Size:1223K  infineon
 imz120r140m1h.pdf pdf_icon

IMZ120R060M1H

IMZ120R140M1H IMZ120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IMW120R140M1H , IMW120R220M1H , IMW120R350M1H , IMW65R027M1H , IMW65R048M1H , IMW65R072M1H , IMW65R107M1H , IMZ120R030M1H , AO4407 , IMZ120R090M1H , IMZ120R140M1H , IMZ120R220M1H , IMZ120R350M1H , IMZA65R027M1H , IMZA65R048M1H , IMZA65R072M1H , IPA029N06NM5S .

 

 
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