Справочник MOSFET. IMZ120R140M1H

 

IMZ120R140M1H Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IMZ120R140M1H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 94 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 23 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 2 ns
   Cossⓘ - Выходная емкость: 25 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.189 Ohm
   Тип корпуса: TO247-4
 

 Аналог (замена) для IMZ120R140M1H

   - подбор ⓘ MOSFET транзистора по параметрам

 

IMZ120R140M1H Datasheet (PDF)

 ..1. Size:1223K  infineon
 imz120r140m1h.pdf pdf_icon

IMZ120R140M1H

IMZ120R140M1H IMZ120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 7.1. Size:1224K  infineon
 imz120r090m1h.pdf pdf_icon

IMZ120R140M1H

IMZ120R090M1H IMZ120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 7.2. Size:1317K  infineon
 imz120r350m1h.pdf pdf_icon

IMZ120R140M1H

IMZ120R350M1H IMZ120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 7.3. Size:1223K  infineon
 imz120r060m1h.pdf pdf_icon

IMZ120R140M1H

IMZ120R060M1H IMZ120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IMW120R350M1H , IMW65R027M1H , IMW65R048M1H , IMW65R072M1H , IMW65R107M1H , IMZ120R030M1H , IMZ120R060M1H , IMZ120R090M1H , IRFP450 , IMZ120R220M1H , IMZ120R350M1H , IMZA65R027M1H , IMZA65R048M1H , IMZA65R072M1H , IPA029N06NM5S , IPA040N06NM5S , IPA040N08NM5S .

 

 
Back to Top

 


 
.