STD15N06T4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STD15N06T4
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 170 ns
Выходная емкость (Cd): 230 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm
Тип корпуса: DPAK
Аналог (замена) для STD15N06T4
STD15N06T4 Datasheet (PDF)
std15n06l std15n06l-1 std15n06lt4.pdf
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STD15N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06L 60 V
std15n06-.pdf
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STD15N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06 60 V
std15nf10.pdf
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STD15NF10N-channel 100 V, 0.060 , 23 A, DPAKlow gate charge STripFET II Power MOSFETFeaturesVDSSS RDS(on) max IDTypeSTD15NF10 100 V
stb15n65m5 std15n65m5.pdf
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STB15N65M5, STD15N65M5DatasheetN-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packagesFeaturesTABTABVDS @RDS(on) max. IDOrder codeTJmax32213STB15N65M51710 V 0.34 11 AD2PAK DPAKSTD15N65M5 Extremely low RDS(on)D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval
std15nf10t4.pdf
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STD15NF10N-channel 100 V, 0.060 , 23 A, DPAKlow gate charge STripFET II Power MOSFETFeaturesVDSSS RDS(on) max IDTypeSTD15NF10 100 V
std15n65m5.pdf
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STB15N65M5, STD15N65M5N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTABSTB15N65M5TAB710 V
std15n50m2ag.pdf
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STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS
std15n.pdf
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STD15N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06L 60 V
stu15n20 std15n20.pdf
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STU15N20GreenProductSTD15N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.200V 15A 190 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKAB
std15nf10t4.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD15NF10T4FEATURESWith To-252(DPAK) packageApplication oriented characterizationExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![STD15N06T4](https://alltransistors.com/images/us.png)
![STD15N06T4](https://alltransistors.com/images/es.png)
![STD15N06T4](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C