Справочник MOSFET. IPA60R280P7S

 

IPA60R280P7S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPA60R280P7S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 24 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 14 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
   Тип корпуса: TO220FP

 Аналог (замена) для IPA60R280P7S

 

 

IPA60R280P7S Datasheet (PDF)

 ..1. Size:1097K  infineon
ipa60r280p7s.pdf

IPA60R280P7S IPA60R280P7S

IPA60R280P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

 3.1. Size:1105K  infineon
ipa60r280p7.pdf

IPA60R280P7S IPA60R280P7S

IPA60R280P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

 3.2. Size:201K  inchange semiconductor
ipa60r280p7.pdf

IPA60R280P7S IPA60R280P7S

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R280P7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 4.1. Size:2865K  infineon
ipa60r280p6 ipp60r280p6 ipw60r280p6.pdf

IPA60R280P7S IPA60R280P7S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPP60R280P6, IPA60R280P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 4.2. Size:2621K  infineon
ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf

IPA60R280P7S IPA60R280P7S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPB60R280P6, IPP60R280P6,IPA60R280P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 4.3. Size:223K  inchange semiconductor
ipa60r280p6.pdf

IPA60R280P7S IPA60R280P7S

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R280P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

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