IPA70R600P7S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPA70R600P7S
Маркировка: 70S600P7
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 24.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Qg ⓘ - Общий заряд затвора: 10.5 nC
tr ⓘ - Время нарастания: 5.5 ns
Cossⓘ - Выходная емкость: 7 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220FP
Аналог (замена) для IPA70R600P7S
IPA70R600P7S Datasheet (PDF)
ipa70r600p7s.pdf

IPA70R600P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,
ipa70r360p7s 70s360p7.pdf

IPA70R360P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,
ipa70r900p7s.pdf

IPA70R900P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,
ipa70r750p7s.pdf

IPA70R750P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: JMPL0622AK
History: JMPL0622AK



Список транзисторов
Обновления
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