IPAN70R600P7S datasheet, аналоги, основные параметры
Наименование производителя: IPAN70R600P7S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 24.9 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5.5 ns
Cossⓘ - Выходная емкость: 7 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220FP
Аналог (замена) для IPAN70R600P7S
- подборⓘ MOSFET транзистора по параметрам
IPAN70R600P7S даташит
ipan70r600p7s.pdf
IPAN70R600P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting
ipan70r900p7s.pdf
IPAN70R900P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting
ipan70r750p7s.pdf
IPAN70R750P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting
ipan70r450p7s.pdf
IPAN70R450P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting
Другие IGBT... IPAN60R210PFD7S, IPAN60R280P7S, IPAN60R280PFD7S, IPAN60R360P7S, IPAN60R360PFD7S, IPAN60R600P7S, IPAN70R360P7S, IPAN70R450P7S, IRF540N, IPAN70R750P7S, IPAN70R900P7S, IPAN80R280P7, IPAN80R360P7, IPAN80R450P7, IPAW60R180P7S, IPAW60R190CE, IPAW60R280CE
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