Справочник MOSFET. IPAW60R190CE

 

IPAW60R190CE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPAW60R190CE
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 26.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 85 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO220FPWC
 

 Аналог (замена) для IPAW60R190CE

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPAW60R190CE Datasheet (PDF)

 ..1. Size:1023K  infineon
 ipaw60r190ce.pdf pdf_icon

IPAW60R190CE

IPAW60R190CEMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

 6.1. Size:1100K  infineon
 ipaw60r180p7s.pdf pdf_icon

IPAW60R190CE

IPAW60R180P7SMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a

 7.1. Size:1094K  infineon
 ipaw60r280p7s.pdf pdf_icon

IPAW60R190CE

IPAW60R280P7SMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a

 7.2. Size:979K  infineon
 ipaw60r600ce.pdf pdf_icon

IPAW60R190CE

IPAW60R600CEMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPAN70R450P7S , IPAN70R600P7S , IPAN70R750P7S , IPAN70R900P7S , IPAN80R280P7 , IPAN80R360P7 , IPAN80R450P7 , IPAW60R180P7S , IRFP260N , IPAW60R280CE , IPAW60R280P7S , IPAW60R380CE , IPAW60R600CE , IPAW60R600P7S , IPAW70R600CE , IPAW70R950CE , IPB017N10N5LF .

History: VS3625DP2-G | IRF7821PBF | IRHMS597260 | MCH3382 | UPA2353 | NCE60NP1515K | HGN080N10S

 

 
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