Справочник MOSFET. IPAW60R600P7S

 

IPAW60R600P7S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPAW60R600P7S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 21 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 7 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO220FPWC
     - подбор MOSFET транзистора по параметрам

 

IPAW60R600P7S Datasheet (PDF)

 ..1. Size:1083K  infineon
 ipaw60r600p7s.pdf pdf_icon

IPAW60R600P7S

IPAW60R600P7SMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a

 4.1. Size:979K  infineon
 ipaw60r600ce.pdf pdf_icon

IPAW60R600P7S

IPAW60R600CEMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

 7.1. Size:1094K  infineon
 ipaw60r280p7s.pdf pdf_icon

IPAW60R600P7S

IPAW60R280P7SMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a

 7.2. Size:991K  infineon
 ipaw60r380ce.pdf pdf_icon

IPAW60R600P7S

IPAW60R380CEMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SQJ474EP | STP80NE03L-06

 

 
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