IPB120N04S4-04 - описание и поиск аналогов

 

Аналоги IPB120N04S4-04. Основные параметры


   Наименование производителя: IPB120N04S4-04
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 770 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для IPB120N04S4-04

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPB120N04S4-04 даташит

 ..1. Size:263K  infineon
 ipb120n04s4-04.pdf pdf_icon

IPB120N04S4-04

IPB120N04S4-04 OptiMOS -T2 Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R 3.6 mW DS(on),max Automotive AEC Q101 qualified I 120 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 Green package (lead free) 100% Avalanche tested Type Package Ordering Code Marking IPB120N04S4-04 PG-TO263-3-2 -

 1.1. Size:159K  infineon
 ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf pdf_icon

IPB120N04S4-04

IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

 1.2. Size:164K  infineon
 ipi120n04s4-02 ipp120n04s4-02 ipb120n04s4-02.pdf pdf_icon

IPB120N04S4-04

IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

 1.3. Size:159K  infineon
 ipb120n04s4-01 ipi120n04s4-01 ipp120n04s4-01 ipp120n04s4-01 ipb120n04s4-01 ipi120n04s4-01.pdf pdf_icon

IPB120N04S4-04

IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.5 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPAW70R950CE , IPB017N10N5LF , IPB019N08N5 , IPB024N10N5 , IPB032N10N5 , IPB060N15N5 , IPB110P06LM , IPB120N03S4L-03 , IRF630 , IPB120N04S4L-02 , IPB120N08S4-03 , IPB120N08S4-04 , IPB120P04P4-04 , IPB140N08S4-04 , IPB160N04S4L-H1 , IPB17N25S3-100 , AUIRF1324L .

 

 

 


 
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