BSC037N08NS5T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSC037N08NS5T
Маркировка: 037N08NT
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3 W
Предельно допустимое напряжение сток-исток |Uds|: 80 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.8 V
Максимально допустимый постоянный ток стока |Id|: 22 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 46 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 530 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0037 Ohm
Тип корпуса: SUPERSO8
Аналог (замена) для BSC037N08NS5T
BSC037N08NS5T Datasheet (PDF)
bsc037n08ns5t.pdf
BSC037N08NS5TMOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 80 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified according to JEDE
bsc037n08ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC037N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC037N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
bsc030n03ls .pdf
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bsc030n04nsg.pdf
BSC030N04NS GOptiMOS3 Power-Transistor Product SummaryV 40 VFeatures DSR 3.0m Fast switching MOSFET for SMPS DS(on),maxI 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S
bsc035n10ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 100 VBSC035N10NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 100 VBSC035N10NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior therma
bsc039n06ns.pdf
TypeBSC039N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 3.9 mW Superior thermal resistanceID 100 A N-channelQOSS nC 32 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant H
bsc030n08ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC030N08NS5Data SheetRev. 2.2FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC030N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
bsc030n03lsg.pdf
BSC030N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDSR 3m Fast switching MOSFET for SMPS DS(on),maxI 100 AD Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi
bsc030p03ns3g.pdf
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bsc034n03ls.pdf
BSC034N03LS GOptiMOS3 Power-MOSFETProduct Summary Features VDS 30 V Fast switching MOSFET for SMPSRDS(on),max 3.4 mW Optimized technology for DC/DC convertersID 100 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Sup
bsc034n06ns.pdf
TypeBSC034N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 3.4 mW Superior thermal resistanceID 100 A N-channelQOSS nC 37 Qualified according to JEDEC1) for target applicationsQG(0V..10V) 33 nC Pb-free lead plating; RoHS compliant Hal
bsc030n03ms.pdf
BSC030N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 3mDS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 3.8GSI 100 A 100% avalanche tested DPG-TDSON-8 N-channel Very low on-resistance RDS(on) @ VGS=4.5V Excellent gate charge x RDS(on) product
bsc030n03msg.pdf
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bsc034n03lsg.pdf
BSC034N03LS GOptiMOS3 Power-MOSFETProduct Summary Features VDS 30 V Fast switching MOSFET for SMPSRDS(on),max 3.4 mW Optimized technology for DC/DC convertersID 100 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Sup
bsc032ne2ls.pdf
BSC032NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 3.2 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 84 A 100% avalanche testedQOSS 9.4 nC Superior thermal resistanceQG(0V..10V) 16 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8
bsc032n04ls.pdf
BSC032N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 3.2 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 98 A 100% avalanche testedQOSS 22 nC Superior thermal resistanceQG(0V..10V) 25 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8
bsc030n03ls.pdf
BSC030N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDSR 3m Fast switching MOSFET for SMPS DS(on),maxI 100 AD Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi
bsc031n06ns3 bsc031n06ns3g.pdf
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bsc034n10ls5.pdf
BSC034N10LS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified acco
bsc035n04lsg.pdf
BSC035N04LS GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc036ne7ns3g.pdf
BSC036NE7NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 75 V Optimized technology for synchronous rectificationRDS(on),max 3.6mW Ideal for high frequency switching and DC/DC convertersID 100 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS
bsc034n03ls .pdf
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Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: 2SK2049 | MT6JN009A | MT6JN008A | MT40N20A | MT28N20A | MT20N024A | MT06N020AL | MT06N020A | MT06N005A | MT04N005AL | MT04N004B | MT03N03FAL | MS65R620RR | MS65R620RF | MS65R600R | MS65R600F