Справочник MOSFET. IPB120N10S4-03

 

IPB120N10S4-03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPB120N10S4-03
   Маркировка: 4N1003
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 108 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 2460 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IPB120N10S4-03

 

 

IPB120N10S4-03 Datasheet (PDF)

 ..1. Size:353K  infineon
ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N10S4-03IPI120N10S4-03, IPP120N10S4-03OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max (SMD version) 3.5mWID 120 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch

 1.1. Size:386K  infineon
ipb120n10s4-05 ipi120n10s4-05 ipp120n10s4-05.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N10S4-05IPI120N10S4-05, IPP120N10S4-05OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max (SMD version) 5.0mWID 120 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch

 1.2. Size:356K  inchange semiconductor
ipb120n10s4-05.pdf

IPB120N10S4-03
IPB120N10S4-03

isc N-Channel MOSFET Transistor IPB120N10S4-05FEATURESDrain Current : I = 120A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.3m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 7.1. Size:203K  infineon
ipb120n04s4l-02.pdf

IPB120N10S4-03
IPB120N10S4-03

Data Sheet IPB120N04S4L-02OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.7mID 120 AFeaturesPG-TO263-3-2 N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB120N04S4L-02 PG-TO263-3- 4N04L02

 7.2. Size:225K  infineon
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N08S4-03IPI120N08S4-03, IPP120N08S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 2.5mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 7.3. Size:170K  infineon
ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N06S4-03IPI120N06S4-03, IPP120N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.8mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 7.4. Size:159K  infineon
ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N04S4-02IPI120N04S4-02, IPP120N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.8mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

 7.5. Size:211K  infineon
ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N08S4-04IPI120N08S4-04, IPP120N08S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 4.1mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 7.6. Size:737K  infineon
ipb120n06ng ipp120n06ng.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N06N G IPP120N06N G Power-TransistorProduct SummaryFeaturesV D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>=R 11 7 m + >= =O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' ! #) ' ' !Package O 1 O

 7.7. Size:174K  infineon
ipi120n06s4-h1 ipp120n06s4-h1 ipb120n06s4-h1.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 7.8. Size:170K  infineon
ipb120n06s4-h1 ipi120n06s4-h1 ipp120n06s4-h1.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 7.9. Size:164K  infineon
ipi120n04s4-02 ipp120n04s4-02 ipb120n04s4-02.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N04S4-02IPI120N04S4-02, IPP120N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.8mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

 7.10. Size:191K  infineon
ipb120n04s3-02 ipi120n04s3-02 ipp120n04s3-02 ipp120n04s3 ipb120n04s3 ipi120n04s3-02.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N04S3-02IPI120N04S3-02, IPP120N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.0mDS(on),maxI 120 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rd

 7.11. Size:170K  infineon
ipb120n06s4-02 ipi120n06s4-02 ipp120n06s4-02 ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N06S4-02IPI120N06S4-02, IPP120N06S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.4mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

 7.12. Size:159K  infineon
ipb120n04s4-01 ipi120n04s4-01 ipp120n04s4-01 ipp120n04s4-01 ipb120n04s4-01 ipi120n04s4-01.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N04S4-01IPI120N04S4-01, IPP120N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.5mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

 7.13. Size:277K  infineon
ipb120n03s4l-03.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel - Enhancement modeR 3mWDS(on),max Automotive AEC Q101 qualifiedI 120 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 Green package (lead free) 100% Avalanche testedType Package Ordering Code MarkingIPB120N03S4L-03 PG-TO263-3-2 -

 7.14. Size:263K  infineon
ipb120n04s4-04.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR 3.6mWDS(on),max Automotive AEC Q101 qualifiedI 120 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 Green package (lead free) 100% Avalanche testedType Package Ordering Code MarkingIPB120N04S4-04 PG-TO263-3-2 -

 7.15. Size:856K  cn vbsemi
ipb120n06ng.pdf

IPB120N10S4-03
IPB120N10S4-03

IPB120N06NGwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sou

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