IPB180P04P4-03
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPB180P04P4-03
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 150
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 180
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 31
ns
Cossⓘ - Выходная емкость: 4070
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0028
Ohm
Тип корпуса:
TO263-7
Аналог (замена) для IPB180P04P4-03
-
подбор ⓘ MOSFET транзистора по параметрам
IPB180P04P4-03
Datasheet (PDF)
..1. Size:313K infineon
ipb180p04p4-03.pdf 
Final Data Sheet IPB180P04P4-03OptiMOS-P2 Power-TransistorProduct Summary VDS -40 V RDS(on) 2.8 mW ID -180 A Features P-channel - Normal Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedDrain Pin 4, Tab Gate Pin 1 Source Pi
3.1. Size:172K infineon
ipb180p04p4l-02.pdf 
Final Data Sheet IPB180P04P4L-02OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR 2.4mWDS(on),maxI -180 ADFeaturesPG-TO263-7-3 P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedDrain Intended for reverse battery pro
8.1. Size:256K infineon
ipb180n10s4-03.pdf 
IPB180N10S4-03OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on) 3.3mWID 180 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N10S4-03 PG-TO263-7-3 4N1003Maximum ratin
8.2. Size:351K infineon
ipb180n04s4-00.pdf 
IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.98mWID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N0400Maxim
8.3. Size:161K infineon
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf 
IPB180N03S4L-H0OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 0.95mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N03S4L-H0 PG-TO263-7-3 4N
8.4. Size:201K infineon
ipb180n08s4-02.pdf 
IPB180N08S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR 2.2mWDS(on),maxI 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high IDType Package MarkingIPB180N08
8.5. Size:204K infineon
ipb180n10s4-02.pdf 
IPB180N10S4-02OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on) 2.5mID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N10S4-02 PG-TO263-7-3 4N1002Maximum ratings, at T =25
8.6. Size:176K infineon
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf 
IPB180N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 1.7mDS(on),maxI 180 ADFeaturesPG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high IDType Package MarkingIPB180N0
8.7. Size:162K infineon
ipb180n04s4-00 ds 1 0.pdf 
IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.98mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N040
8.8. Size:162K infineon
ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf 
IPB180N04S4-H0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.1mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-H0 PG-TO263-7-3 4N04H0
8.9. Size:213K infineon
ipb180n04s4l-01.pdf 
Data Sheet IPB180N04S4L-01OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.2mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-01 PG-TO263-7-3 4N04L01Ma
8.10. Size:213K infineon
ipb180n04s4l-h0.pdf 
Data Sheet IPB180N04S4L-H0OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.0mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-H0 PG-TO263-7-3 4N04LH0Ma
8.11. Size:183K infineon
ipb180n04s3-02 ipb180n04s3-02 ds 1 0.pdf 
IPB180N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 1.5mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType MarkingPackageIPB180N04S3-02 PG-
8.12. Size:162K infineon
ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf 
IPB180N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.3mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-01 PG-TO263-7-3 4N0401
8.13. Size:161K infineon
ipb180n03s4l-01 ipb180n03s4l-01 ds 1 0.pdf 
IPB180N03S4L-01OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 1.05mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N03S4L-01 PG-TO263-7-3 4N
Другие MOSFET... IPB120N10S4-03
, IPB120N10S4-05
, IPB120P04P4L-03
, IPB180N04S4L-01
, IPB180N04S4L-H0
, IPB180N08S4-02
, IPB180N10S4-02
, IPB180N10S4-03
, IRF1404
, IPB180P04P4L-02
, IPB240N03S4L-R8
, IPB240N04S4-1R0
, IPB240N04S4-R9
, IPB35N10S3L-26
, IPB50N12S3L-15
, IPB60R040CFD7
, IPB60R045P7
.
History: CEP85N75
| FTK2102
