STD20N06T4
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: STD20N06T4
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 60
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tj ⓘ - Максимальная температура канала: 175
°C
Qg ⓘ -
Общий заряд затвора: 60
nC
tr ⓘ -
Время нарастания: 280
ns
Cossⓘ - Выходная емкость: 350
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03
Ohm
Тип корпуса:
DPAK
Аналог (замена) для STD20N06T4
-
подбор ⓘ MOSFET транзистора по параметрам
STD20N06T4
Datasheet (PDF)
8.1. Size:342K st
std20nf06t4.pdf 
STD20NF06N-channel 60V - 0.032 - 24A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06 60V
8.3. Size:345K st
std20nf06.pdf 
STD20NF06N-channel 60V - 0.032 - 24A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06 60V
8.4. Size:105K st
std20ne03l.pdf 
STD20NE03LN - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on ) IDSTD20NE03L 30 V
8.5. Size:410K st
std20nf06l std20nf06l-1.pdf 
STD20NF06LSTD20NF06L-1N-channel 60V - 0.032 - 24A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06L 60V
8.6. Size:328K st
std20nf10t4.pdf 
STD20NF10N-channel 100V - 0.038 - 100A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD20NF10 100V
8.7. Size:909K st
std20nf20 stf20nf20 stp20nf20.pdf 
STD20NF20STF20NF20, STP20NF20N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FPlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PWSTD20NF20 200 V
8.8. Size:331K st
std20nf10.pdf 
STD20NF10N-channel 100V - 0.038 - 100A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD20NF10 100V
8.9. Size:106K samhop
stu20n15 std20n15.pdf 
GrerrPPrPrProSTU/D20N15aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.58 @ VGS=10VTO-252 and TO-251 Package.150V 20A65 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK
8.10. Size:1181K umw-ic
std20nf06l.pdf 
R STD20NF06LUMW60V N-Channel Enhancement Mode Power MOSFETUMW STD20NF06LGeneral DescriptionThe STD20NF06L uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.FeaturesVDS = 60V,ID =30ARDS(ON),25m(Typ) @ VGS =10VRDS(ON),30m(Typ) @ VGS =4.5VAdvanced Trench TechnologyExcellent RD
8.11. Size:286K inchange semiconductor
std20nf20.pdf 
isc N-Channel MOSFET Transistor STD20NF20FEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.12. Size:286K inchange semiconductor
std20nf06l.pdf 
isc N-Channel MOSFET Transistor STD20NF06LFEATURESDrain Current : I = 24A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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