IPD60R280PFD7S. Аналоги и основные параметры

Наименование производителя: IPD60R280PFD7S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 51 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 15 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm

Тип корпуса: TO252

Аналог (замена) для IPD60R280PFD7S

- подборⓘ MOSFET транзистора по параметрам

 

IPD60R280PFD7S даташит

 ..1. Size:611K  infineon
 ipd60r280pfd7s.pdf pdf_icon

IPD60R280PFD7S

IPD60R280PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d

 4.1. Size:911K  infineon
 ipd60r280p7s.pdf pdf_icon

IPD60R280PFD7S

IPD60R280P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF

 4.2. Size:1081K  infineon
 ipd60r280p7.pdf pdf_icon

IPD60R280PFD7S

IPD60R280P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE

 4.3. Size:242K  inchange semiconductor
 ipd60r280p7s.pdf pdf_icon

IPD60R280PFD7S

isc N-Channel MOSFET Transistor IPD60R280P7S IIPD60R280P7S FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IPD60N10S4-12, IPD60N10S4L-12, IPD60R145CFD7, IPD60R180P7, IPD60R1K0PFD7S, IPD60R1K5PFD7S, IPD60R210CFD7, IPD60R210PFD7S, RFP50N06, IPD60R2K0PFD7S, IPD60R360CFD7, IPD60R600PFD7S, IPD650P06NM, IPD70N12S3-11, IPD70N12S3L-12, IPD70P04P4L-08, IPD70R1K4P7S