Справочник MOSFET. IPD80R2K7C3A

 

IPD80R2K7C3A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IPD80R2K7C3A

Маркировка: 80C2k7A

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 42 W

Предельно допустимое напряжение сток-исток |Uds|: 800 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 3.9 V

Максимально допустимый постоянный ток стока |Id|: 2 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 12 nC

Время нарастания (tr): 15 ns

Выходная емкость (Cd): 13 pf

Сопротивление сток-исток открытого транзистора (Rds): 2.7 Ohm

Тип корпуса: TO252

Аналог (замена) для IPD80R2K7C3A

 

 

IPD80R2K7C3A Datasheet (PDF)

0.1. ipd80r2k7c3a.pdf Size:510K _infineon

IPD80R2K7C3A
IPD80R2K7C3A

Data Sheet IPD80R2k7C3ACoolMOSTM Power TransistorProduct Summary FeaturesVDS 800 V New revolutionary high voltage technologyRDS(on)max @ Tj = 25C 2.7 W Extreme dv/dt ratedQg,typ 12 nC High peak current capability Qualified according to AEC Q101 Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compoundPG-TO252-3 Ultra

6.1. ipd80r2k4p7.pdf Size:960K _infineon

IPD80R2K7C3A
IPD80R2K7C3A

IPD80R2K4P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

6.2. ipd80r2k8ce ipu80r2k8ce.pdf Size:2275K _infineon

IPD80R2K7C3A
IPD80R2K7C3A

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R2K8CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R2K8CE, IPU80R2K8CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

 6.3. ipd80r2k0p7.pdf Size:964K _infineon

IPD80R2K7C3A
IPD80R2K7C3A

IPD80R2K0P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

6.4. ipd80r2k8ce.pdf Size:243K _inchange_semiconductor

IPD80R2K7C3A
IPD80R2K7C3A

isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CEFEATURESStatic drain-source on-resistance:RDS(on)2.8Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

Другие MOSFET... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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