IPD80R450P7 - Даташиты. Аналоги. Основные параметры

IPD80R450P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

IPD80R4K5P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

IPD80R750P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R2K8CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R2K8CE, IPU80R2K8CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

IPD80R1K4P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

IPD80R2K4P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

IPD80R2K0P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

IPD80R900P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

IPD80R3K3P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

IPD80R360P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

Data Sheet IPD80R2k7C3A CoolMOSTM Power Transistor Product Summary Features VDS 800 V New revolutionary high voltage technology RDS(on)max @ Tj = 25 C 2.7 W Extreme dv/dt rated Qg,typ 12 nC High peak current capability Qualified according to AEC Q101 Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compound PG-TO252-3 Ultra

IPD80R280P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

IPD80R600P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K0CE, IPU80R1K0CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CE FEATURES Static drain-source on-resistance RDS(on) 2.8 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CE FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag