IPDD60R150G7. Аналоги и основные параметры
Наименование производителя: IPDD60R150G7
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 95 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 19 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
Тип корпуса: HDSOP-10
Аналог (замена) для IPDD60R150G7
- подборⓘ MOSFET транзистора по параметрам
IPDD60R150G7 даташит
ipdd60r150g7.pdf
IPDD60R150G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F
ipdd60r125g7.pdf
IPDD60R125G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F
ipdd60r080g7.pdf
IPDD60R080G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F
ipdd60r050g7.pdf
IPDD60R050G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F
Другие IGBT... IPD90N10S4L-06, IPD90P04P4L-04, IPD95R1K2P7, IPD95R450P7, IPD95R750P7, IPDD60R050G7, IPDD60R080G7, IPDD60R125G7, IRF3205, IPF060N03LG, IPF075N03LG, IPG16N10S4-61A, IPG16N10S4L-61A, IPG20N04S4-18A, IPG20N04S4L-07A, IPG20N04S4L-18A, IPG20N06S2L-50A
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Список транзисторов
Обновления
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