IPI80P04P4-07 datasheet, аналоги, основные параметры
Наименование производителя: IPI80P04P4-07 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 88 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 1520 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0077 Ohm
Тип корпуса: TO262
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Аналог (замена) для IPI80P04P4-07
- подборⓘ MOSFET транзистора по параметрам
IPI80P04P4-07 даташит
ipb80p04p4-07 ipi80p04p4-07 ipp80p04p4-07.pdf
IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R (SMD Version) 7.4 mW DS(on) I -80 A D Features P-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche test
ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf
IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 7.9 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested
ipb80p04p4l-04 ipi80p04p4l-04 ipp80p04p4l-04.pdf
IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 4.4 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested
ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf
IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.1 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche
Другие IGBT... IPI120N10S4-05, IPI120P04P4-04, IPI120P04P4L-03, IPI16CN10NG, IPI50N12S3L-15, IPI70N12S3-11, IPI80N08S4-06, IPI80P03P4-05, STP75NF75, IPI80P04P4L-04, IPI80P04P4L-08, IPL60R060CFD7, IPL60R065C7, IPL60R075CFD7, IPL60R085P7, IPL60R095CFD7, IPL60R125P7
Параметры MOSFET. Взаимосвязь и компромиссы
History: STD9NM50N | CJBA3134K | FDB8442F085 | NDB7052L | FQD2N90TM | AO4828
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