Справочник MOSFET. IPL60R075CFD7

 

IPL60R075CFD7 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPL60R075CFD7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 189 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 53 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
   Тип корпуса: VSON-4
     - подбор MOSFET транзистора по параметрам

 

IPL60R075CFD7 Datasheet (PDF)

 ..1. Size:1413K  infineon
ipl60r075cfd7.pdfpdf_icon

IPL60R075CFD7

IPL60R075CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

 7.1. Size:1193K  infineon
ipl60r060cfd7.pdfpdf_icon

IPL60R075CFD7

IPL60R060CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

 7.2. Size:1195K  infineon
ipl60r095cfd7.pdfpdf_icon

IPL60R075CFD7

IPL60R095CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

 7.3. Size:1367K  infineon
ipl60r085p7.pdfpdf_icon

IPL60R075CFD7

IPL60R085P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: R5009FNX | IRC8405 | SFQ030N100C3 | 7N65KG-T2Q-T | 2SK56 | SQJ460AEP | IRF6217

 

 
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