IPN60R1K5CE. Аналоги и основные параметры

Наименование производителя: IPN60R1K5CE

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 16 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm

Тип корпуса: SOT223

Аналог (замена) для IPN60R1K5CE

- подборⓘ MOSFET транзистора по параметрам

 

IPN60R1K5CE даташит

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 ipn60r1k5ce.pdf pdf_icon

IPN60R1K5CE

IPN60R1K5CE MOSFET PG-SOT223 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

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IPN60R1K5CE

IPN60R1K0PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d

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IPN60R1K5CE

IPN60R2K0PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d

 8.2. Size:1230K  infineon
 ipn60r360p7s.pdf pdf_icon

IPN60R1K5CE

IPN60R360P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF

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