Справочник MOSFET. IPN70R1K5CE

 

IPN70R1K5CE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPN70R1K5CE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.9 ns
   Cossⓘ - Выходная емкость: 18 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: SOT223
     - подбор MOSFET транзистора по параметрам

 

IPN70R1K5CE Datasheet (PDF)

 ..1. Size:1055K  infineon
 ipn70r1k5ce.pdf pdf_icon

IPN70R1K5CE

IPN70R1K5CEMOSFETPG-SOT223700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 6.1. Size:1056K  infineon
 ipn70r1k0ce.pdf pdf_icon

IPN70R1K5CE

IPN70R1K0CEMOSFETPG-SOT223700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 6.2. Size:1022K  infineon
 ipn70r1k2p7s.pdf pdf_icon

IPN70R1K5CE

IPN70R1K2P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 6.3. Size:1010K  infineon
 ipn70r1k4p7s.pdf pdf_icon

IPN70R1K5CE

IPN70R1K4P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BRA7N80 | 2SK3532 | TK62J60W | STP5NB40

 

 
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