IPN80R1K4P7 - аналоги и даташиты транзистора

 

IPN80R1K4P7 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: IPN80R1K4P7
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 6.5 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для IPN80R1K4P7

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPN80R1K4P7 Datasheet (PDF)

 ..1. Size:1052K  infineon
 ipn80r1k4p7.pdf pdf_icon

IPN80R1K4P7

IPN80R1K4P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 6.1. Size:1043K  infineon
 ipn80r1k2p7.pdf pdf_icon

IPN80R1K4P7

IPN80R1K2P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.1. Size:1038K  infineon
 ipn80r2k4p7.pdf pdf_icon

IPN80R1K4P7

IPN80R2K4P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.2. Size:1023K  infineon
 ipn80r750p7.pdf pdf_icon

IPN80R1K4P7

IPN80R750P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPN70R1K5CE , IPN70R2K0P7S , IPN70R2K1CE , IPN70R360P7S , IPN70R600P7S , IPN70R750P7S , IPN70R900P7S , IPN80R1K2P7 , STF13NM60N , IPN80R2K4P7 , IPN80R4K5P7 , IPN80R600P7 , IPN80R750P7 , IPN80R900P7 , IPN95R3K7P7 , IPP015N04N6 , IPP100N12S3-05 .

History: WFW20N60W | AP9965GEM | BUK9230-100B | WFF5N65B | SPB12N50C3 | RQ3E100BN | HY4306B6

 

 
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