IPP60R120P7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPP60R120P7
Маркировка: 60R120P7
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 95 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 26 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 36 nC
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 27 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.12 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP60R120P7
IPP60R120P7 Datasheet (PDF)
ipp60r120p7.pdf
IPP60R120P7MOSFETPG-TO 220600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ
ipp60r120c7.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPP60R120C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPP60R120C7TO-2201 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle a
ipp60r120c7.pdf
isc N-Channel MOSFET Transistor IPP60R120C7IIPP60R120C7FEATURESStatic drain-source on-resistance:RDS(on) 0.12Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the experience of the leading SJ MOSFET supplierwith high class innovationABSOL
ipp60r125cp.pdf
IPP60R125CPCIMOSTM #:A0:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compoundPGTO220 ::7!"%
ipa60r125p6 ipp60r125p6 ipw60r125p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj
ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
ipp60r125p6.pdf
isc N-Channel MOSFET Transistor IPP60R125P6IIPP60R125P6FEATURESStatic drain-source on-resistance:RDS(on) 0.125Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSO
ipp60r125cp.pdf
isc N-Channel MOSFET Transistor IPP60R125CPIIPP60R125CPFEATURESStatic drain-source on-resistance:RDS(on) 0.125Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)
ipp60r125c6.pdf
isc N-Channel MOSFET Transistor IPP60R125C6IIPP60R125C6FEATURESStatic drain-source on-resistance:RDS(on) 0.125Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSwhile not sacrificing ease of us
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