IPP80P04P4-07 - аналоги и даташиты транзистора

 

IPP80P04P4-07 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: IPP80P04P4-07
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 88 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 1520 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0077 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для IPP80P04P4-07

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPP80P04P4-07 Datasheet (PDF)

 ..1. Size:225K  infineon
 ipb80p04p4-07 ipi80p04p4-07 ipp80p04p4-07.pdf pdf_icon

IPP80P04P4-07

IPB80P04P4-07IPI80P04P4-07, IPP80P04P4-07OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR (SMD Version) 7.4mWDS(on)I -80 ADFeatures P-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche test

 4.1. Size:290K  infineon
 ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf pdf_icon

IPP80P04P4-07

IPB80P04P4L-08IPI80P04P4L-08, IPP80P04P4L-08OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 7.9mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

 4.2. Size:461K  infineon
 ipb80p04p4l-04 ipi80p04p4l-04 ipp80p04p4l-04.pdf pdf_icon

IPP80P04P4-07

IPB80P04P4L-04IPI80P04P4L-04, IPP80P04P4L-04OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 4.4mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

 7.1. Size:173K  infineon
 ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf pdf_icon

IPP80P04P4-07

IPB80P03P4L-04IPI80P03P4L-04, IPP80P03P4L-04OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.1mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPP60R090CFD7 , IPP60R105CFD7 , IPP60R120P7 , IPP60R160P7 , IPP60R210CFD7 , IPP70N12S3-11 , IPP80N08S4-06 , IPP80P03P4-05 , AO4468 , IPP80P04P4L-04 , IPP80P04P4L-08 , IPP80R360P7 , IPP80R450P7 , IPP80R750P7 , IPP80R900P7 , IPS60R1K0CE , IPS60R1K0PFD7S .

History: NCEAP40ND60AG | NVD4856N | MMBFJ271 | SI2351DS-T1 | CEB10N65

 

 
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