Справочник MOSFET. IPP80P04P4L-04

 

IPP80P04P4L-04 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPP80P04P4L-04
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 2533 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0047 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

IPP80P04P4L-04 Datasheet (PDF)

 ..1. Size:461K  infineon
ipb80p04p4l-04 ipi80p04p4l-04 ipp80p04p4l-04.pdfpdf_icon

IPP80P04P4L-04

IPB80P04P4L-04IPI80P04P4L-04, IPP80P04P4L-04OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 4.4mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

 1.1. Size:290K  infineon
ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdfpdf_icon

IPP80P04P4L-04

IPB80P04P4L-08IPI80P04P4L-08, IPP80P04P4L-08OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 7.9mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

 4.1. Size:225K  infineon
ipb80p04p4-07 ipi80p04p4-07 ipp80p04p4-07.pdfpdf_icon

IPP80P04P4L-04

IPB80P04P4-07IPI80P04P4-07, IPP80P04P4-07OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR (SMD Version) 7.4mWDS(on)I -80 ADFeatures P-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche test

 7.1. Size:173K  infineon
ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdfpdf_icon

IPP80P04P4L-04

IPB80P03P4L-04IPI80P03P4L-04, IPP80P03P4L-04OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.1mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: DMN62D0U | JCS5N50CT | JCS40N25ANT | NVMFS5C628N | SI7913DN | NCEP026N10F | MC11N005

 

 
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