IPP80R450P7 datasheet, аналоги, основные параметры
Наименование производителя: IPP80R450P7
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 73 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 14 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP80R450P7
- подборⓘ MOSFET транзистора по параметрам
IPP80R450P7 даташит
ipp80r450p7.pdf
IPP80R450P7 MOSFET PG-TO 220 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C
ipp80r900p7.pdf
IPP80R900P7 MOSFET PG-TO 220 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C
ipp80r360p7.pdf
IPP80R360P7 MOSFET PG-TO 220 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C
ipp80r750p7.pdf
IPP80R750P7 MOSFET PG-TO 220 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C
Другие IGBT... IPP60R210CFD7, IPP70N12S3-11, IPP80N08S4-06, IPP80P03P4-05, IPP80P04P4-07, IPP80P04P4L-04, IPP80P04P4L-08, IPP80R360P7, IRFZ44N, IPP80R750P7, IPP80R900P7, IPS60R1K0CE, IPS60R1K0PFD7S, IPS60R210PFD7S, IPS60R280PFD7S, IPS60R2K1CE, IPS60R360PFD7S
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Список транзисторов
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