IPP80R900P7 - Даташиты. Аналоги. Основные параметры
Наименование производителя: IPP80R900P7
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 6 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP80R900P7
IPP80R900P7 Datasheet (PDF)
ipp80r900p7.pdf

IPP80R900P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ipp80r360p7.pdf

IPP80R360P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ipp80r450p7.pdf

IPP80R450P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ipp80r750p7.pdf

IPP80R750P7MOSFETPG-TO 220800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
Другие MOSFET... IPP80N08S4-06 , IPP80P03P4-05 , IPP80P04P4-07 , IPP80P04P4L-04 , IPP80P04P4L-08 , IPP80R360P7 , IPP80R450P7 , IPP80R750P7 , IRF740 , IPS60R1K0CE , IPS60R1K0PFD7S , IPS60R210PFD7S , IPS60R280PFD7S , IPS60R2K1CE , IPS60R360PFD7S , IPS60R600PFD7S , IPS70R1K4P7S .



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