Справочник MOSFET. IPS80R600P7

 

IPS80R600P7 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPS80R600P7
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 11 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для IPS80R600P7

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPS80R600P7 Datasheet (PDF)

 ..1. Size:946K  infineon
 ips80r600p7.pdf pdf_icon

IPS80R600P7

IPS80R600P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.1. Size:950K  infineon
 ips80r2k4p7.pdf pdf_icon

IPS80R600P7

IPS80R2K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.2. Size:962K  infineon
 ips80r1k2p7.pdf pdf_icon

IPS80R600P7

IPS80R1K2P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.3. Size:951K  infineon
 ips80r900p7.pdf pdf_icon

IPS80R600P7

IPS80R900P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPS70R1K4P7S , IPS70R360P7S , IPS70R600P7S , IPS70R900P7S , IPS80R1K2P7 , IPS80R1K4P7 , IPS80R2K0P7 , IPS80R2K4P7 , P55NF06 , IPS80R750P7 , IPS80R900P7 , IPSA70R1K2P7S , IPSA70R1K4CE , IPSA70R1K4P7S , IPSA70R2K0CE , IPSA70R2K0P7S , IPSA70R450P7S .

History: AP60WN2K1I | HGP115N15S | AP80N04Q | AP20N15AGH | AMS930N | UT2327 | APT901RBN

 

 
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