IPSA70R1K4P7S - описание и поиск аналогов

 

IPSA70R1K4P7S - Аналоги. Основные параметры


   Наименование производителя: IPSA70R1K4P7S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 22.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4.9 ns
   Cossⓘ - Выходная емкость: 3 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для IPSA70R1K4P7S

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPSA70R1K4P7S технические параметры

 ..1. Size:871K  infineon
 ipsa70r1k4p7s.pdf pdf_icon

IPSA70R1K4P7S

IPSA70R1K4P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge

 4.1. Size:1086K  infineon
 ipsa70r1k4ce.pdf pdf_icon

IPSA70R1K4P7S

IPSA70R1K4CE MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting mark

 5.1. Size:882K  infineon
 ipsa70r1k2p7s.pdf pdf_icon

IPSA70R1K4P7S

IPSA70R1K2P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge

 7.1. Size:884K  infineon
 ipsa70r900p7s.pdf pdf_icon

IPSA70R1K4P7S

IPSA70R900P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPS80R1K4P7 , IPS80R2K0P7 , IPS80R2K4P7 , IPS80R600P7 , IPS80R750P7 , IPS80R900P7 , IPSA70R1K2P7S , IPSA70R1K4CE , P55NF06 , IPSA70R2K0CE , IPSA70R2K0P7S , IPSA70R450P7S , IPSA70R600CE , IPSA70R600P7S , IPSA70R750P7S , IPSA70R900P7S , IPT012N06N .

 

 
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