Справочник MOSFET. IPSA70R1K4P7S

 

IPSA70R1K4P7S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPSA70R1K4P7S
   Маркировка: 70S1K4P7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 22.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 4.7 nC
   trⓘ - Время нарастания: 4.9 ns
   Cossⓘ - Выходная емкость: 3 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

IPSA70R1K4P7S Datasheet (PDF)

 ..1. Size:871K  infineon
 ipsa70r1k4p7s.pdf pdf_icon

IPSA70R1K4P7S

IPSA70R1K4P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

 4.1. Size:1086K  infineon
 ipsa70r1k4ce.pdf pdf_icon

IPSA70R1K4P7S

IPSA70R1K4CEMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting mark

 5.1. Size:882K  infineon
 ipsa70r1k2p7s.pdf pdf_icon

IPSA70R1K4P7S

IPSA70R1K2P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

 7.1. Size:884K  infineon
 ipsa70r900p7s.pdf pdf_icon

IPSA70R1K4P7S

IPSA70R900P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRLR3714Z

 

 
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