IPT60R050G7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPT60R050G7
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 245 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 44 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 55 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: HSOF-8
Аналог (замена) для IPT60R050G7
IPT60R050G7 Datasheet (PDF)
ipt60r050g7.pdf
IPT60R050G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go
ipt60r040s7.pdf
IPT60R040S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R040S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r
ipt60r065s7.pdf
IPT60R065S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R065S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r
ipt60r028g7.pdf
IPT60R028G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go
ipt60r022s7.pdf
IPT60R022S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R022S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918