IPU80R750P7 datasheet, аналоги, основные параметры
Наименование производителя: IPU80R750P7
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 9 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
Тип корпуса: TO251
Аналог (замена) для IPU80R750P7
- подборⓘ MOSFET транзистора по параметрам
IPU80R750P7 даташит
ipu80r750p7.pdf
IPU80R750P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(
ipu80r2k0p7.pdf
IPU80R2K0P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(
ipu80r600p7.pdf
IPU80R600P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(
ipu80r1k4p7.pdf
IPU80R1K4P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(
Другие IGBT... IPT60R150G7, IPT65R033G7, IPT65R105G7, IPT65R195G7, IPU80R1K4P7, IPU80R2K0P7, IPU80R2K4P7, IPU80R600P7, CS150N03A8, IPU95R450P7, IPU95R750P7, IPW60R024CFD7, IPW60R031CFD7, IPW60R037CSFD, IPW60R040CFD7, IPW60R045P7, IPW60R090CFD7
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Список транзисторов
Обновления
MOSFET: RM50P30DF | CRTT095N12N | CRSS028N10N | CRST030N10N | CRJQ80N65F | ASDM20N20KQ | ASDM20N100Q | ASDM12N65F | ASDM100R750PKQ | ASDM100R160NKQ | ASDM100R090NP | ASDM100R066NQ | ASDM100R045NQ | ASDM100N34KQ | ASDM100N15KQ | FTF30P35D
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