IPW60R090CFD7 datasheet, подбор замены

 ..1. Size:1375K  infineon
 ipw60r090cfd7.pdf 

IPW60R090CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

 6.1. Size:378K  infineon
 ipw60r099cpa.pdf 

IPW60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 DS(on),max Q 60 nC g,typ Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for Aut

 6.2. Size:644K  infineon
 ipw60r099cp.pdf 

IPW60R099CP TM C IMOSTM # A0IN V . J6A>;> 9 688DG9>CC6CI PG TO247 1 V 2 AIG6 ADL

 6.3. Size:1385K  infineon
 ipw60r099c6.pdf 

MOSFET + =L9D - PA

 6.4. Size:2269K  infineon
 ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 6.5. Size:1400K  infineon
 ipw60r099p7.pdf 

IPW60R099P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS

 6.6. Size:1541K  infineon
 ipw60r099c7.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPW60R099C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPW60R099C7 TO-247 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

 6.7. Size:2087K  infineon
 ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the supe

 6.8. Size:243K  inchange semiconductor
 ipw60r099p6.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099P6 IIPW60R099P6 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 6.9. Size:243K  inchange semiconductor
 ipw60r099cp.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099CP IIPW60R099CP FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 6.10. Size:242K  inchange semiconductor
 ipw60r099p7.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099P7 IIPW60R099P7 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 6.11. Size:243K  inchange semiconductor
 ipw60r099c7.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099C7 IIPW60R099C7 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V