IPW60R105CFD7 datasheet, подбор замены

 ..1. Size:1161K  infineon
 ipw60r105cfd7.pdf 

IPW60R105CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

 7.1. Size:1019K  infineon
 ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunct

 7.2. Size:1335K  infineon
 ipw60r120p7.pdf 

IPW60R120P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS

 7.3. Size:1494K  infineon
 ipw60r190c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according

 7.4. Size:1304K  infineon
 ipw60r180p7.pdf 

IPW60R180P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS

 7.5. Size:851K  infineon
 ipw60r190e6 ipp60r190e6 ipa60r190e6.pdf 

C lMO e n i t I 1 I 1 I 1 O 47 O O 1 Descripti n t b C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n pi neee b In ine n e n l ie C lMO eie mbine t e expeien e t e le in MO pplie it i l inn ti n e e ltin e i e p i e ll bene it t it in MO ile n t i i in e e e xtemel l it in n n ti n l e m ke it in

 7.6. Size:1329K  infineon
 ipw60r125cfd7.pdf 

IPW60R125CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

 7.7. Size:1564K  infineon
 ipw60r180c7.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPW60R180C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPW60R180C7 TO-247 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

 7.8. Size:1359K  infineon
 ipw60r120c7.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPW60R120C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPW60R120C7 TO-247 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

 7.9. Size:1150K  infineon
 ipw60r190e6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R190E6, IPA60R190E6 IPW60R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)

 7.10. Size:2872K  infineon
 ipa60r190p6 ipp60r190p6 ipw60r190p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPP60R190P6, IPA60R190P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 7.11. Size:2645K  infineon
 ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPB60R160P6, IPP60R160P6, IPA60R160P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,

 7.12. Size:2729K  infineon
 ipa60r125p6 ipp60r125p6 ipw60r125p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 7.13. Size:653K  infineon
 ipw60r199cpa.pdf 

IPW60R199CP C IMOS # A0 9 688DG9>CC6CI 7!"% # 4= =;0.4,77C /0=4290/ 1 I8=>C

 7.14. Size:657K  infineon
 ipw60r165cp.pdf 

IPW60R165CP C IMOS # A0 9 688DG9>CC6CI PG TO247 7!"% # 4= =;0.4,77C /0=4290/ 1 I8=>C

 7.15. Size:1965K  infineon
 ipw60r160c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superj

 7.16. Size:1214K  infineon
 ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to

 7.17. Size:1374K  infineon
 ipw60r170cfd7.pdf 

IPW60R170CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

 7.18. Size:3091K  infineon
 ipw60r190p6 ipb60r190p6 ipp60r190p6 ipa60r190p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,

 7.19. Size:1257K  infineon
 ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj

 7.20. Size:595K  infineon
 ipw60r199cp.pdf 

IPW60R199CP CoolMOS Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R 0.199 DS(on),max Ultra low gate charge Q 33 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO247-3 Pb-free lead plating; RoHS compliant CoolMOS CP is specially design

 7.21. Size:2788K  infineon
 ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 7.22. Size:672K  infineon
 ipw60r125cp.pdf 

IPW60R125CP C IMOS # A0 9 688DG9>CC6CI PG TO247 1 7!"% # 4= =;0.4,77C /0=4290/ 1 I8

 7.23. Size:2909K  infineon
 ipa60r160p6 ipp60r160p6 ipw60r160p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPP60R160P6, IPA60R160P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 7.24. Size:242K  inchange semiconductor
 ipw60r120p7.pdf 

isc N-Channel MOSFET Transistor IPW60R120P7 IIPW60R120P7 FEATURES Static drain-source on-resistance RDS(on) 120m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

 7.25. Size:269K  inchange semiconductor
 ipw60r190c6.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R190C IIPW60R190C6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

 7.26. Size:243K  inchange semiconductor
 ipw60r190p6.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R190P6 IIPW60R190P6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 7.27. Size:242K  inchange semiconductor
 ipw60r180c7.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R180C7 IIPW60R180C7 FEATURES Static drain-source on-resistance RDS(on) 180m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 7.28. Size:242K  inchange semiconductor
 ipw60r125p6.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R125P6 IIPW60R125P6 FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 7.29. Size:243K  inchange semiconductor
 ipw60r120c7.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R120C7 IIPW60R120C7 FEATURES Static drain-source on-resistance RDS(on) 120m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 7.30. Size:242K  inchange semiconductor
 ipw60r190e6.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R190E6 IIPW60R190E6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 7.31. Size:242K  inchange semiconductor
 ipw60r160p6.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R160P6 IIPW60R160P6 FEATURES Static drain-source on-resistance RDS(on) 160m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 7.32. Size:242K  inchange semiconductor
 ipw60r125c6.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R125C6 IIPW60R125C6 FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 7.33. Size:242K  inchange semiconductor
 ipw60r165cp.pdf 

isc N-Channel MOSFET Transistor IPW60R165CP IIPW60R165CP FEATURES Static drain-source on-resistance RDS(on) 165m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 7.34. Size:242K  inchange semiconductor
 ipw60r160c6.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R160C6 IIPW60R160C6 FEATURES Static drain-source on-resistance RDS(on) 160m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 7.35. Size:242K  inchange semiconductor
 ipw60r170cfd7.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R170CFD7 IIPW60R170CFD7 FEATURES Static drain-source on-resistance RDS(on) 170m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai

 7.36. Size:242K  inchange semiconductor
 ipw60r199cp.pdf 

isc N-Channel MOSFET Transistor IPW60R199CP IIPW60R199CP FEATURES Static drain-source on-resistance RDS(on) 199m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 7.37. Size:242K  inchange semiconductor
 ipw60r125cp.pdf 

isc N-Channel MOSFET Transistor IPW60R125CP IIPW60R125CP FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta