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IRF1310NLPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF1310NLPBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 160 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 42 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 110(max) nC
   Время нарастания (tr): 56 ns
   Выходная емкость (Cd): 450 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.036 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IRF1310NLPBF

 

 

IRF1310NLPBF Datasheet (PDF)

 ..1. Size:721K  infineon
irf1310nspbf irf1310nlpbf.pdf

IRF1310NLPBF
IRF1310NLPBF

PD- 95322IRF1310NS/LPbF Lead-Freewww.irf.com 105/27/04IRF1310NS/LPbF2 www.irf.comIRF1310NS/LPbFwww.irf.com 3IRF1310NS/LPbF4 www.irf.comIRF1310NS/LPbFwww.irf.com 5IRF1310NS/LPbF6 www.irf.comIRF1310NS/LPbFwww.irf.com 7IRF1310NS/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WITHPART NUMBERLOT CODE 8024INTERNATIONAL

 5.1. Size:256K  inchange semiconductor
irf1310nl.pdf

IRF1310NLPBF
IRF1310NLPBF

Isc N-Channel MOSFET Transistor IRF1310NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10

 6.1. Size:594K  international rectifier
irf1310npbf.pdf

IRF1310NLPBF
IRF1310NLPBF

PD - 95690IRF1310NPbF Lead-Freewww.irf.com8/19/04IRF1310NPbF2 www.irf.comIRF1310NPbFwww.irf.com 3IRF1310NPbF4 www.irf.comIRF1310NPbFwww.irf.com 5IRF1310NPbF6 www.irf.comIRF1310NPbFwww.irf.com 7IRF1310NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.5

 6.2. Size:721K  international rectifier
irf1310nspbf.pdf

IRF1310NLPBF
IRF1310NLPBF

PD- 95322IRF1310NS/LPbF Lead-Freewww.irf.com 105/27/04IRF1310NS/LPbF2 www.irf.comIRF1310NS/LPbFwww.irf.com 3IRF1310NS/LPbF4 www.irf.comIRF1310NS/LPbFwww.irf.com 5IRF1310NS/LPbF6 www.irf.comIRF1310NS/LPbFwww.irf.com 7IRF1310NS/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WITHPART NUMBERLOT CODE 8024INTERNATIONAL

 6.3. Size:156K  international rectifier
irf1310ns.pdf

IRF1310NLPBF
IRF1310NLPBF

PD - 91514BIRF1310NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Operating TemperatureRDS(on) = 0.036G Fast Switching Fully Avalanche RatedID = 42ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

 6.4. Size:96K  international rectifier
irf1310n.pdf

IRF1310NLPBF
IRF1310NLPBF

PD - 91504AIRF1310NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036 Fully Avalanche RatedGDescription ID = 42ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbene

 6.5. Size:594K  infineon
irf1310npbf.pdf

IRF1310NLPBF
IRF1310NLPBF

PD - 95690IRF1310NPbF Lead-Freewww.irf.com8/19/04IRF1310NPbF2 www.irf.comIRF1310NPbFwww.irf.com 3IRF1310NPbF4 www.irf.comIRF1310NPbFwww.irf.com 5IRF1310NPbF6 www.irf.comIRF1310NPbFwww.irf.com 7IRF1310NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.5

 6.6. Size:258K  inchange semiconductor
irf1310ns.pdf

IRF1310NLPBF
IRF1310NLPBF

Isc N-Channel MOSFET Transistor IRF1310NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 6.7. Size:245K  inchange semiconductor
irf1310n.pdf

IRF1310NLPBF
IRF1310NLPBF

isc N-Channel MOSFET Transistor IRF1310NIIRF1310NFEATURESStatic drain-source on-resistance:RDS(on) 0.036Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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