IRF300P226 - Даташиты. Аналоги. Основные параметры

IRF300P226 MOSFET StrongIRFET V 300V D DSS RDS(on) typ. 16m Gmax 19m Applications SI 100A D UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits

PD -94424AAUTOMOTIVE MOSFETIRF3007Typical ApplicationsHEXFET Power MOSFET 42 Volts Automotive Electrical SystemsDFeaturesVDSS = 75V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 0.0126 Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] QualifiedID = 75ASDescriptionSpecifically designed for Autom

PD -95618AIRF3007PbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 75Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 0.0126l Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescription This design of HEXFET Power MOSFETs utilizes thelastest processing techniques to achieve

PD - 95494AIRF3007SPbFIRF3007LPbFTypical Applicationsl Industrial Motor Drive HEXFET Power MOSFETFeatures DVDSS = 75Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0126Gl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 62ASDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing technique

PD- 95255IRF3000PbFSMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters300V 0.40W@VGS = 10V 1.6Al Lead-FreeBenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6SEffective COSS to Simplify Design, (See DApp. Note AN1001) 45G Dl Fully Char

PD- 94423IRF3000SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters300V 0.40W@VGS = 10V 1.6ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6SEffective COSS to Simplify Design, (See DApp. Note AN1001) 45G Dl Fully Characterized Avalan

PD - 97677AUTOMOTIVE GRADEAUIRF3004WLHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDV(BR)DSS40Vl Ultra Low On-ResistanceRDS(on) typ.1.27ml 50% Lower Lead Resistancemax. 1.40ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)386A l Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240A l Lead-Free, RoHS

PD - 96417AUTOMOTIVE GRADEAUIRF3007HEXFET Power MOSFETFeaturesDl Advanced Planar Technology V(BR)DSS75Vl Low On-ResistanceRDS(on) typ.10.5ml 175C Operating Temperaturemax 12.6ml Fast SwitchingGID (Silicon Limited)l Fully Avalanche Rated 80Al Repetitive Avalanche Allowed SID (Package Limited)75Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive

isc N-Channel MOSFET Transistor IRF3007IIRF3007FEATURESStatic drain-source on-resistance:RDS(on) 12.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

Isc N-Channel MOSFET Transistor IRF3007LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

Isc N-Channel MOSFET Transistor IRF3007SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt