G2302 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: G2302
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.1 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 55 ns
Cossⓘ - Выходная емкость: 120 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
Тип корпуса: SOT23
G2302 Datasheet (PDF)
g2302.pdf
G2302 N-Channel 20-V(D-S) Mosfet1. GATE SOT-232. SOURCE 3. DRAIN FeaturesTrenchFET Power MOSFET Applications Load Switch for Portable Devices DC/DC Converter Dimensions in inches and (millimeters)MARKING: 2302Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS 20V Gate-Source Voltage VGS 8 Continuous Dra
dmg2302uq.pdf
DMG2302UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 90m @ VGS = 4.5V 4.2A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = 2.5V 2.7A Halogen and Antimony Free. Green Device
dmg2302uk.pdf
DMG2302UK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 90m @ VGS = 4.5V 2.8A ESD Protected Gate 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = 2.5V 2.4A Halogen and Antimony Free. Gre
dmg2302u.pdf
DMG2302UN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D L
smg2302.pdf
SMG23023.2A, 20V,RDS(ON) 85m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSC-59ADim Min MaxDescription LA 2.70 3.103B 1.40 1.60SBTop ViewThe SMG2302 provide the designer with the best 2 1C 1.00 1.30Combination of fast switching, low on-resistance D 0.35 0.50and
smg2302n.pdf
SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33app
dmg2302u.pdf
Product specificationDMG2302UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D Low Input/Output Leakage Terminal
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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