ME12N04 - аналоги, параметры транзистора - Справочник транзисторов

ME12N04 даташит

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ME12N04/ME12N04-G N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME12N04 is the N-Channel logic enhancement mode power RDS(ON)=28m @VGS=10V (N-Ch) field effect transistors are produced using high cell density, DMOS RDS(ON)=52m @VGS=4.5V (N-Ch) trench technology. This high density process is especially tailored to Super high density cell design for extrem

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ME12N04 www.VBsemi.tw N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET ABSO

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me12n15 me12n15-g.pdf pdf_icon

ME12N15 / ME12N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 150m @VGS=10V The ME12N15 is the N-Channel logic enhancement mode power RDS(ON) 250m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially

Другие MOSFET... ME08N20 , ME08N20-G , ME10N15 , ME10N15-G , ME110N10T , ME110N10F , ME120N10T , ME120N10T-G , 2SK3568 , ME12N04-G , ME12N15 , ME12N15-G , ME12P04 , ME12P04-G , ME15N10-G , ME20N03 , ME20N03-G .