ME20P03 - аналоги, параметры транзистора - Справочник транзисторов

ME20P03 даташит

..1. Size:1673K matsuki electric
me20p03 me20p03-g.pdf pdf_icon

ME20P03/ME20P03-G P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20P03 is the P-Channel logic enhancement mode power field RDS(ON) 32m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 42m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

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ME20P03 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-Cha

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me20p06 me20p06-g.pdf pdf_icon

ME20P06/ME20P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20P06 is the P-Channel logic enhancement mode power field RDS(ON) 78m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 100m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

8.2. Size:828K cn vbsemi
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ME20P06 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbo

Другие MOSFET... ME12N15-G , ME12P04 , ME12P04-G , ME15N10-G , ME20N03 , ME20N03-G , ME20N15 , ME20N15-G , IRFZ24N , ME20P03-G , ME20P06 , ME20P06-G , ME2301 , ME2301-G , IRF7303PBF , IRF7304PBF , IRF7306PBF .