IRF7304PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7304PBF
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.7(min) V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.3 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 22(max) nC
trⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 310 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: SO-8
Аналог (замена) для IRF7304PBF
IRF7304PBF Datasheet (PDF)
irf7304pbf.pdf
PD - 95038IRF7304PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P-Channel MosfetVDSS = -20V2 7G1 D1l Surface Mount3 6l Available in Tape & ReelS2 D2l Dynamic dv/dt Rating45G2 D2RDS(on) = 0.090l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize adva
irf7304pbf-1.pdf
IRF7304PbF-1HEXFET Power MOSFETVDS -20 V1 8S1 D1RDS(on) max 0.09 2 7(@V = -4.5V) G1 D1GSQg 22 nC3 6S2 D2ID 4 5-4.3 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentall
auirf7304q.pdf
AUTOMOTIVE GRADE AUIRF7304Q Features HEXFET Power MOSFET Advanced Planar Technology VDSS 1 8 Low On-Resistance S1 D1 -20V 2 7G1 D1 Dual P Channel MOSFET RDS(on) max. 0.0903 6S2 D2 Dynamic dv/dt Rating 4 5ID G2 D2-4.3A Logic Level 150C Operating Temperature Top View Fast Switching Lead-Free, RoHS Compliant
irf7304q.pdf
PD - 96104IRF7304QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P Channel MOSFETVDSS = -20V2 7G1 D1l Surface Mountl Available in Tape & Reel3 6S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualified RDS(on) = 0.090l Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl
irf7304qpbf.pdf
PD - 96104IRF7304QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P Channel MOSFETVDSS = -20V2 7G1 D1l Surface Mountl Available in Tape & Reel3 6S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualified RDS(on) = 0.090l Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl
irf7304.pdf
PD - 9.1240CIRF7304HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance1 8S1 D1 Dual P-Channel MosfetVDSS = -20V2 7G1 D1 Surface Mount3 6 Available in Tape & ReelS2 D2 Dynamic dv/dt Rating4 5G2 D2RDS(on) = 0.090 Fast SwitchingT op V iewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtec
irf7304qtr.pdf
IRF7304QTRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V
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Список транзисторов
Обновления
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