IRF7316PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7316PBF
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1(min) V
Максимально допустимый постоянный ток стока |Id|: 4.9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 23 nC
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 380 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.058 Ohm
Тип корпуса: SO-8
Аналог (замена) для IRF7316PBF
IRF7316PBF Datasheet (PDF)
irf7316pbf.pdf
PD - 95182IRF7316PbFHEXFET Power MOSFETl Generation V Technology1 8S1 D1l Ultra Low On-ResistanceVDSS = -30V2 7l Dual P-Channel MOSFETG1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-Free RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme
irf7316pbf-1.pdf
IRF7316TRPbF-1HEXFET Power MOSFETVDS -30 V1 8S1 D1RDS(on) max 0.058 2 7G1 D1(@V = -10V)GSQg (typical) 23 nC 3 6S2 D2ID 4 5-4.9 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free En
irf7316qpbf.pdf
PD - 96126IRF7316QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-Resistance S1 D1VDSS = -30Vl Dual P- Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reell 150C Operating Temperature 4 5G2 D2RDS(on) = 0.058l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appli
auirf7316q.pdf
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8S1 D1 -30V Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0423 6 Low On-Resistance S2 D24 5 Logic Level Gate Drive D2 max. G20.058 Dual P Channel MOSFET Top ViewID -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Complian
irf7316.pdf
PD - 9.1505AIRF7316PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -30V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.058T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
irf7316s.pdf
PD - 9.1505AIRF7316PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -30V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.058T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
irf7316qpbf.pdf
PD - 96126AIRF7316QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P- Channel MOSFETVDSS = -30V2 7l Surface Mount G1 D1l Available in Tape & Reel3 6S2 D2l 150C Operating Temperature4 5G2 D2l Lead-FreeRDS(on) = 0.058Top ViewDescriptionThese HEXFET Power MOSFET's in a DualSO-8 package utilize the laste
auirf7316q.pdf
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8S1 D1 -30V Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0423 6 Low On-Resistance S2 D24 5 Logic Level Gate Drive D2 max. G20.058 Dual P Channel MOSFET Top ViewID -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Complian
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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