IRF7483MTRPBF - Даташиты. Аналоги. Основные параметры
Наименование производителя: IRF7483MTRPBF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 74
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 135
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 53
ns
Cossⓘ - Выходная емкость: 642
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0023
Ohm
Тип корпуса:
DIRECTFET
Аналог (замена) для IRF7483MTRPBF
IRF7483MTRPBF Datasheet (PDF)
..1. Size:510K international rectifier
irf7483mtrpbf.pdf 

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon
6.1. Size:495K international rectifier
irf7483m.pdf 

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon
8.1. Size:498K international rectifier
irf7480m.pdf 

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic
8.2. Size:231K international rectifier
irf7484pbf.pdf 

PD - 95281A IRF7484PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive VDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14A Benefits l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax. A A 1 8 l Lead-Free S D 2 7 S D Description 3 6 S D This Stripe Planar design of HEXFET Power 4 5 MOSFETs
8.3. Size:141K international rectifier
irf7488.pdf 

PD - 94507 IRF7488 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 80V 29mW@VGS=10V 38nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D and
8.4. Size:151K international rectifier
irf7488pbf.pdf 

PD - 95283 IRF7488PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High frequency DC-DC converters 80V 29mW@VGS=10V 38nC l Lead-Free A Benefits A 1 8 S D l Low Gate-to-Drain Charge to Reduce 2 7 S D Switching Losses 3 6 S D l Fully Characterized Capacitance Including 4 5 G D Effective COSS to Simplify Design, (See App. Note AN1001) SO-8 Top View l Fully Cha
8.5. Size:180K international rectifier
irf7484.pdf 

PD - 94446A IRF7484 Typical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air Bag VDSS RDS(on) max (mW) ID Benefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax A A 1 8 S D 2 7 S D Description 3 6 S D Specifically designed for Automotive applications
8.6. Size:224K international rectifier
auirf7484q.pdf 

AUTOMOTIVE GRADE PD - 97757 AUIRF7484Q Features HEXFET Power MOSFET l Advanced Planar Technology A A 1 8 l Low On-Resistance S D V(BR)DSS 40V 2 7 S D l 150 C Operating Temperature 3 6 S D RDS(on) max. 10m l Fast Switching 4 5 G D l Fully Avalanche Rated ID 14A Top View l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*
8.7. Size:248K international rectifier
irf7484q.pdf 

PD - 94803A AUTOMOTIVE MOSFET IRF7484Q Typical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air Bag VDSS RDS(on) max (mW) ID Benefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax A A 1 8 S D 2 7 S D Description 3 6 S D Specifically designed for Aut
8.8. Size:498K infineon
irf7480mtrpbf.pdf 

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic
8.9. Size:416K infineon
auirf7484q.pdf 

AUTOMOTIVE GRADE AUIRF7484Q HEXFET Power MOSFET Features Advanced Planar Technology A VDSS A 1 8 Low On-Resistance 40V S D 2 7 S D 150 C Operating Temperature RDS(on) max. 3 6 S D Fast Switching 10m 4 5 G D Fully Avalanche Rated ID Top View Repetitive Avalanche Allowed up to Tjmax 14A Lead-Free, RoHS Compliant Auto
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