Справочник MOSFET. IRFB7730PBF

 

IRFB7730PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB7730PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 246 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 271 nC
   trⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 1120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB7730PBF

 

 

IRFB7730PBF Datasheet (PDF)

 ..1. Size:657K  infineon
 irfb7730pbf irfs7730pbf irfsl7730pbf.pdf

IRFB7730PBF IRFB7730PBF

StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A

 6.1. Size:657K  international rectifier
 irfb7730 irfs7730pbf irfsl7730pbf.pdf

IRFB7730PBF IRFB7730PBF

StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A

 6.2. Size:246K  inchange semiconductor
 irfb7730.pdf

IRFB7730PBF IRFB7730PBF

isc N-Channel MOSFET Transistor IRFB7730,IIRFB7730FEATURESStatic drain-source on-resistance:RDS(on) 2.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOL

 7.1. Size:650K  international rectifier
 irfb7734 irfs7734pbf irfsl7734pbf.pdf

IRFB7730PBF IRFB7730PBF

StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp

 7.2. Size:653K  infineon
 irfb7734pbf irfs7734pbf irfsl7734pbf.pdf

IRFB7730PBF IRFB7730PBF

StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp

 7.3. Size:246K  inchange semiconductor
 irfb7734.pdf

IRFB7730PBF IRFB7730PBF

isc N-Channel MOSFET Transistor IRFB7734,IIRFB7734FEATURESStatic drain-source on-resistance:RDS(on) 3.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOL

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